Dow Corning Compound Semiconductor Solutions has either authored or
co-authored the following technical articles. Should you require a copy
of the complete article, please contact the publication directly as copyrights
belong to the specific publications.
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| Date | | Title | | Publication | |
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| Oct-09 | | Characterization of 4 Inch 4H-Silicon
Carbide Wafer With Extremely Low Basal Plane Dislocation Density | | Proceedings of the International Conference on
Silicon Carbide and Related Materials – 2009, Nuremburg, Germany, October
12-16, 2009 | |
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| Oct-09 | | Nucleation of C-axis Screw
Dislocations at Substrate Surface Damages During the 4H-Silicon Carbide
Homo-Epitaxy | | Proceedings of the International Conference on
Silicon Carbide and Related Materials – 2009, Nuremburg, Germany, October
12-16, 2009 | |
| | | | | | |
| Oct-09 | | Correlation between carrier
recombination lifetime and forward voltage drop in 4H-SiC PIN diodes | | Proceedings of the International Conference on
Silicon Carbide and Related Materials – 2009, Nuremburg, Germany, October
12-16, 2009 | |
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| Sep-08 | | “The Effect of 4H-SiC Substrate
Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer
Quality" | | Proceedings of the ECSCRM 2008, Barcelona,
Spain, September 7-12, 2008 | |
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| Sep-08 | | "Carrier Generation Lifetimes in
4H-SiC Epitaxial Wafers"
| | Proceedings of the ECSCRM 2008, Barcelona,
Spain, September 7-12, 2008 | |
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| Sep-08 | | "Wafer Level Recombination
carrier lifetime measurements of 4H-SiC PiN Epitaxial Wafers" | | Proceedings of the ECSCRM 2008, Barcelona, Spain,
September 7-12, 2008 | |
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|
Nov-07
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"Evaluation of Test Methods for Characterizing
Semi-Insulating SiC Wafers"
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Submitted to CS MANTECH Conference – April 2008 Chicago, IL
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Oct-07
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"A Modeling Study on Sensitivity of PVT Growth of Bulk SiC Crystals to
Graphite Crucible Thermal Conductivity and RF Induction Coil Position"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
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Oct-07
| |
"Infrared PL Signatures of N-Type Bulk SiC Substrates with Nitrogen
Impurity Concentrations between 1016 and 1017
cm-3"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
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|
Oct-07
| |
"Sense Determination of Micropipes via Grazing-Incidence Synchrotron
White Beam X-ray Topography in 4H Silicon Carbide"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
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Oct-07
| |
"Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial
Wafers"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
| |
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|
Oct-07
| |
"The Origin of Basal Plane Bending in PVT-Grown SiC Boules"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
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|
Oct-07
| |
"Micropipe Dissociation Through Thick n+ Buffer Layer Growth"
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Proceedings of the International Conference on Silicon Carbide and Related
Materials – 2007, Otsu, Japan, October 14-19, 2007
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|
Aug-07
| |
"Sense Determination of Micropipes via Grazing-Incidence Synchrotron
White Beam X-ray Topography in 4H Silicon Carbide"
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Approved for publication in Applied Physics Letters
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|
Jul-07
| |
“A “Probe-Lift” MOS-Capacitor Technique for Measuring Very Low Oxide Leakage
Currents and Their Effect on Generation Lifetime Extraction."
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Submitted for inclusion in the IEEE Journal of Electron Devices
| |
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|
Jul-07
| |
"Simulation of Grazing-Incidence Synchrotron White Beam X-ray
Topographic Images of Micropipes in 4H-SiC and Determination of Their
Dislocation Senses"
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Submitted for inclusion in the Journal of Electronic Materials
| |
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| Feb-07 | | "A “Probe-Lift” MOS-Capacitor Technique for
Measuring Very Low Oxide Leakage Currents and Their Effect on Generation
Lifetime Extraction" | | IEEETrans. Electron Devices, vol. 55, no. 2, 565~571, February
2007 | |
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| Feb-07 | | "Evidence of negative bias instability in
4H-SiC metal oxide semiconductor capacitors"
| | Appl. Phys. Lett., 90, 253508, 2007 | |
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|
Jan-07
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"Carrier Lifetime Analysis by Microwave Photoconductive Decay (u-PCD)
for 4H SiC Epitaxial Wafers."
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Mat. Sci. For. 556-557 (2007) p 323
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Jan-07
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"Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System"
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Mat. Sci. For. 556-557 (2007) p 145
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Jan-07
| |
"Comparison of Chlorine Based In Situ Etching of 4H SiC
Substrates"
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Mat. Sci. For. 556-557 (2007) p 69
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Sep-06
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"Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon
Precursor"
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Mat. Sci. For. 527-529 (2006) p 175
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|
Sep-06
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"Non-Equilibrium Carrier Diffusion and Recombination in Semi-insulating
PVT Grown Bulk 6H-SiC Crystals"
| |
Mat. Sci. For. 527-529 (2006) p 469
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Sep-06
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"A New Method of Mapping and Counting Micropipes in SiC Wafers"
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Mat. Sci. For. 527-529 (2006) p 447
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Sep-06
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"Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by
Birefringence Imaging"
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Mat. Sci. For. 527-529 (2006) p 721
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Apr-06
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"Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane
Gases"
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Mater. Res. Soc. Symp. Proc. Vol 911, p.49, 2006
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Apr-06
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"Cross Polarization Imaging and Micro Raman Detection of Defects in the
Epitaxy of 4H SiC"
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Journal of Electronic Materials Vol. 34, Nov. 4, 2005
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|
Dec-05
| |
"A Comparative Study of Micropipe Decoration and Counting in Conductive
and Semi-Insulating Silicon Carbide Wafers"
| |
Journal of Electronic Materials , Vol. 34, Nov. 10, 2005
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Oct-05
| |
"Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single
Crystals"
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Mat. Sci. For. 457-460 (2004) p 51
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|
Oct-05
| |
"Electrical Characterization of Semi-insulating 6H-SiC
Substrates"
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Mat. Sci. For. 457-460 (2004) p 669
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May-05
| |
"Nonuniformities of Electrical Resistivity in Undoped 6H
SiC Wafers"
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Journal of Applied Physics 97, 113705 s200d
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