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The unique properties of silicon carbide (SiC) wafers and epitaxy offer the
benefit of faster switching at higher power and increased energy efficiency,
often eliminating expensive cooling systems and enabling improved
performance.
Potential applications include:
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Hybrid or electric vehicles
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Power control systems
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High-frequency communications systems
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Power factor correction
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Uninterrupted power supplies
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Inverter systems
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And more
Options to Meet Your Needs
Dow Corning offers a variety of product options to suit your specific
needs:
4H n+ Conductive SiC Wafers - available in test grades for research,
in commercial grade for high-volume production, or in prime where top-end wafer
specifications are required.
SiC Epitaxy- Epi-layers (n+ or n-) are available on wafers
from Dow Corning Compound Semiconductor Solutions or on customer supplied
wafers. Specifications can be tuned to customer needs, with thickness up to 20
ums.
Product ID
Codes - To assist our customers, each product carries a
product ID codes, with valuable information about polytype, diameter, doping,
orientation, polish, micropipes and grade.
Laser Mark
Format - Employs laser mark methodology similar to that
identified by SEMI.
For more information about any of these products or special needs, including
which product is right for your application, contact
us.
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